EP2446486

• Philips Lumileds Lighting Company LLC; Koninklijke Philips N.V.since Mar 30, 2012; EPO record ends Aug 4, 2017

Embodiments of the invention include a semiconductor structure comprising a Ill-nitride light emitting layer (24) disposed between an n-type region (22) and a p-type region (26). A contact disposed on the p-type region includes a transparent conductive material (28) in direct contact with the p-type region (26), a reflective metal layer (34), and a transparent insulating material (30) disposed between the transparent conductive layer (28) and the reflective metal layer (34). In a plurality of openings (32) in the transparent insulating material (30), the transparent conductive material (28) is in direct contact with the reflective metal layer.

From the international application WO2010150114